TAISIC Materials has announced a shift in its business strategy, focusing on the production of high-end silicio carbide (SiC) substrates.

This strategic repositioning aims to meet the increasing demand for advanced semiconductor materials, particularly those used in high-power and high-frequency applications. SiC substrates offer superior performance compared to traditional silicio substrates in terms of thermal conductivity, breakdown voltage, and switching speed.

TAISIC's decision reflects the growing importance of advanced materials in power electronics, electric vehicles, and other high-tech applications. Silicio carbide is becoming an increasingly sought-after material for next-generation power devices.