Intel has announced a collaboration with Saimemory, a SoftBank subsidiary, to develop and manufacture a new type of vertical-stacked memory called Z-Angle Memory (ZAM).

Z-Angle Memory: Key Features

ZAM is designed to overcome the limitations of traditional memories, offering:
* Higher capacity: Expected to be 2 to 3 times greater than current solutions.
* Increased bandwidth: The new architecture should ensure higher data throughput.
* Reduced power consumption: The goal is to halve energy consumption compared to existing memories.

These features make ZAM particularly interesting for data centers running artificial intelligence (AI) workloads, where the demand for high-performance memory is constantly growing.

Market Implications

Intel and Saimemory's initiative represents an attempt to compete with HBM (High Bandwidth Memory) currently used in AI data centers. The success of ZAM will depend on its ability to achieve the targeted performance and cost goals.